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SSM5H14F

Toshiba Semiconductor
Part Number SSM5H14F
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Diode
Published Sep 19, 2014
Detailed Description SSM5H14F Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H14F ○ Fuse cut applications ...
Datasheet PDF File SSM5H14F PDF File

SSM5H14F
SSM5H14F

Overview
SSM5H14F Silicon N Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5H14F ○ Fuse cut applications of the battery pack • • • 1.
8-V drive An N-ch MOSFET and a Schottky Barrier Diode in one package.
Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Rating 30 ±12 3.
0 6.
0 0.
75 150 Unit V V A W °C 1.
Gate 2.
Source 3.
Anode 4.
Cathode 5.
Drain Schottky Diode (Ta = 25°C) Characteristics Maximum (peak) reverse Voltage Reverse voltage Average forward current Maximum (peak) forward current S...


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