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SSM5H03TU

Toshiba Semiconductor
Part Number SSM5H03TU
Manufacturer Toshiba Semiconductor
Description Silicon Epitaxial Schottky Barrier Diode
Published Sep 19, 2014
Detailed Description SSM5H03TU Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5H03TU DC-DC Converter • • C...
Datasheet PDF File SSM5H03TU PDF File

SSM5H03TU
SSM5H03TU

Overview
SSM5H03TU Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5H03TU DC-DC Converter • • Combined Nch MOSFET and Schottky Diode into one Package.
Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating 12 ±12 1.
4 2.
8 0.
5 0.
8 150 Unit V V A Drain power dissipation Channel temperature W °C UFV DIODE Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY Characteristics Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temper...


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