P-Channel Enhancement Mode MOSFET
Description
P-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (mΩ) Max 25 @VGS = -10V -30V -30A 45 @VGS = -5V 55 @VGS = -4.5V
G S D
SSD3030P
TO-252
D
FEATURES
Super high density cell design for low RDS(ON) . Rugged and reliable. TO-252 package. Pb free.
G S
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Vol...
South Sea Semiconductor
SSD3030P PDF File
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