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SSM6J503NU

Toshiba Semiconductor
Part Number SSM6J503NU
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 14, 2014
Detailed Description SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J503NU Power Management Switch Appli...
Datasheet PDF File SSM6J503NU PDF File

SSM6J503NU
SSM6J503NU

Overview
SSM6J503NU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J503NU Power Management Switch Applications • 1.
5V drive • Low ON-resistance: RDS(ON)= 89.
6 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 57.
9 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 41.
7 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 32.
4 mΩ (max) (@VGS = -4.
5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDSS −20 V Gate-Source voltage VGSS ±8 V Drain current DC ID −6.
0 A Pulse IDP (Note 1) -24.
0 Power Dissipation PD (Note 2) 1 W t ≦10s 2 Channel temperature Storage temperature Tch 150 °C Tstg −55 to 150 °C 1,2,5,6: Drain 3: Gate Note: Using...


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