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SSM6J213FE

Toshiba Semiconductor
Part Number SSM6J213FE
Manufacturer Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Published Sep 12, 2014
Detailed Description SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J213FE ○ Power Management Switch App...
Datasheet PDF File SSM6J213FE PDF File

SSM6J213FE
SSM6J213FE

Overview
SSM6J213FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J213FE ○ Power Management Switch Applications • 1.
5-V drive • Low ON-resistance: RDS(ON) = 250 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 178 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 133 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 103 mΩ (max) (@VGS = -4.
5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID (Note 1) -2.
6 A Pulse IDP (Note 1) -5.
2 Power dissipation Channel temperature Storage temperature range PD (Note 2) 500 mW t = 10s 700 Tch 150 °C Tstg −55 to 150 °C ES6 1,2,5,6 ： Dr...


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