Silicon P-Channel MOSFET
Description
MOSFETs Silicon P-Channel MOS (U-MOS)
SSM6J215FE
1.
Applications
• Power Management Switches
2.
Features
(1) 1.
5-V gate drive voltage.
(2) Low drain-source on-resistance
: RDS(ON) = 154 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 104 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 79 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 59 mΩ (max) (@VGS = -4.
5 V)
3.
Packaging and Pin Configuration
ES6
SSM6J215FE
1,2,5,6: Drain 3: Gate 4: Source
Start of commercial production
2011-07
1
2014-04-04
Rev.
2.
0
SSM6J215FE
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±8
Drain current (DC)
(Note 1)
ID
-3.
4
A
Drain current (pulsed)
(Note 1),(Note 2)
IDP
-10
Power dissipation
(Note 2)
PD
500
mW
Power dissipation
(t = 10 s)
(Note 2)
PD
700
mW
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a FR4 board.
(25.
4 mm × 25.
4 mm × 1.
6 mm, Cu Pad: 645 mm2)
Note: Note:
The MOSFETs in this device are sensitive to electrostatic discharge.
When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge.
The channel-to-ambient thermal resistance, Rth(ch-a), and the power dissipation, PD, vary accor...
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