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TK12E60U

Toshiba Semiconductor
Part Number TK12E60U
Manufacturer Toshiba Semiconductor
Description MOSFETs
Published Sep 11, 2014
Detailed Description TK12E60U MOSFETs Silicon N-Channel MOS (DTMOS) TK12E60U 1. Applications • Switching Voltage Regulators 2. Features (1...
Datasheet PDF File TK12E60U PDF File

TK12E60U
TK12E60U

Overview
TK12E60U MOSFETs Silicon N-Channel MOS (DTMOS) TK12E60U 1.
Applications • Switching Voltage Regulators 2.
Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 0.
36 Ω (typ.
) High forward transfer admittance: |Yfs| = 7.
0 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 600 V) Enhancement mode: Vth = 3.
0 to 5.
0 V (VDS = 10 V, ID = 1 mA) 3.
Packaging and Internal Circuit 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-220 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Repetit...


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