Silicon N-Channel MOSFET
Description
TPCA8049-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPCA8049-H
Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications
Unit: mm
1.
27 0.
4 ± 0.
1
8
0.
05 M A
5
6.
0 ± 0.
3 5.
0 ± 0.
2
• Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 13 nC (typ.
) • Low drain-source ON-resistance: RDS (ON) = 6.
6 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 88 S (typ.
) • Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) • Enhancement mode: Vth = 1.
3 to 2.
3 V (VDS = 10 V, ID = 0.
5 mA)
Absolute Maximum Ratings (Ta = 25°C)
0.
95 ± 0.
05
0.
15 ± 0.
05
0.
166 ± 0.
05
1
4
0.
595
A
5.
0 ± 0.
2
0.
05 S S
1
4
1.
1 ± 0.
2
0.
6 ± 0.
1
3.
5 ± 0.
2
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1) Pulsed (Note 1)
Drain power dissipation (Tc = 25℃)
Drain power dissipation
(t = 10 s) (Note 2a)
Drain power dissipation
(t = 10 s) (Note 2b)
Single-pulse avalanche energy (Note 3)
Avalanche current
Repetitive avalanche energy (Tc = 25℃) (Note 4)
Channel temperature
Storage temperature range
Symbol VDSS VDGR VGSS
ID IDP PD PD
PD
EAS IAR EAR Tch Tstg
Rating
Unit
60
V
60
V
±20
V
28 A
84
45
W
2.
8
W
1.
6
W
57
mJ
28
A
2.
85
mJ
150
°C
−55 to 150
°C
4.
25 ± 0.
2
0.
8 ± 0.
1
8
5
1,2,3:SOURCE 4:GATE 5,6,7,8:DRAIN
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-5Q1A
Weight: 0.
069 g (typ.
)
Circuit Configuration
8765
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.
g.
the application of high
temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the
1234
reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ...
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