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GT50J328

Part Number	GT50J328
Manufacturer	Toshiba Semiconductor
Description	Silicon N-Channel IGBT
Published	Sep 3, 2014
Detailed Description	GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching...
Datasheet	GT50J328 PDF File

Overview

GT50J328 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J328 Current Resonance Inverter Switching Application Fourth Generation IGBT • • • Enhancement mode type High speed : tf = 0.
1 μs (Typ.
) Low saturation voltage : VCE (sat) = 2.
0 V (Typ.
) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Diode forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 600 ±25 50 120 30 120 140 150 −55 to 150 Unit V V A A W °C °C JEDEC ― Note: JEITA ― Using continuously under heavy load...

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