N-Channel MOSFET
Description
TO -22 0A B
BUK7528-55A
N-channel TrenchMOS standard level FET
Rev.
02 — 21 April 2011 Product data sheet
1.
Product profile
1.
1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.
2 Features and benefits
AEC Q101 compliant Low conduction losses due to low on-state resistance
1.
3 Applications
Automotive and general purpose power switching
1.
4 Quick reference data
Table 1.
Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance non-repetitive drain-source avalanche energy VGS = 10 V; ID = 25 A; Tj = 25 °C ID = 34 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °C; unclamped Conditions Tj ≥ 25 °C; Tj ≤ 175 °C Tmb = 25 °C Min Typ Max Unit 55 42 99 V A W mΩ
Static characteristics 23.
8 28
Avalanche ruggedness EDS(AL)S 58 mJ
NXP Semiconductors
BUK7528-55A
N-channel TrenchMOS standard level FET
2.
Pinning information
Table 2.
Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
mbb076
Simplified outline
mb
Graphic symbol
D
G S
1 2 3
SOT78A (TO-220AB)
3.
Ordering information
Table 3.
Ordering information Package Name BUK7528-55A TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78A Type number
4.
Limiting values
Table 4.
Symbol VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM EDS(AL)S Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current peak drain current total power dissipation storage temperature junction temperature source current peak source current non-repetitive drain-source avalanche energy Tmb = 25 °C pulsed; Tmb = 25 °C ID = 34 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 5 V; Tj(init) = 25 °...
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