N-Channel MOSFET
Description
BUK7613-60E
13 July 2012
N-channel TrenchMOS standard level FET
Product data sheet
1.
Product profile
1.
1 General description
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True standard level gate with VGS(th) rating of greater than 1V at 175 °C 1.
3 Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 1.
4 Quick reference data
Table 1.
Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation Conditions Tj ≥ 25 °C; Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig.
1 Tmb = 25 °C; Fig.
2 VGS = 10 V; ID = 15 A; Tj = 25 °C; Fig.
11 ID = 15 A; VDS = 48 V; VGS = 10 V; Fig.
13; Fig.
14 6.
9 nC Min Typ Max 60 58 96 Unit V A W
Static characteristics drain-source on-state resistance 9.
44 13 mΩ
Dynamic characteristics QGD gate-drain charge
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
BUK7613-60E
N-channel TrenchMOS standard level FET
2.
Pinning information
Table 2.
Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
2 1 3
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
D2PAK (SOT404)
3.
Ordering information
Table 3.
Ordering information Package Name BUK7613-60E D2PAK Description Version plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404 (one lead cropped) Type number
4.
Limiting values
Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol VDS VDGR VGS ID Parameter drain-source voltage drain-gate voltage gate-source voltage dra...
Similar Datasheet
