Rectifier Diode Module
Description
SEMiX302KD16s
Absolute Maximum Ratings Symbol
IFAV IFSM i2t
Conditions
Tc = 85 °C Tc = 100 °C Tj = 25 °C Tj = 130 °C Tj = 25 °C Tj = 130 °C
Values
300 240 8500 7500 361000 281000 1700 1600 -40 .
.
.
130 -40 .
.
.
125
Unit
A A A A A2s A2s V V °C °C V V
Recitifier Diode sin.
180° 10 ms 10 ms
SEMiX 2s
®
VRSM VRRM Tj Module
Rectifier Diode Module SEMiX302KD16s
Tstg Visol AC sinus 50Hz 1 min 1s
4000 4800
Features
• Terminal height 17 mm • Chips soldered directly to isolated substrate
Characteristics Symbol
Diode VF V(TO) rT IRD Rth(j-c) Rth(j-c) Module Rth(c-s) Ms Mt a w 250 per chip per module to heat sink (M5) to terminals (M6) 3 2.
5 0.
045 5 5 5 * 9,81 K/W K/W Nm Nm m/s2 g Tj = 25 °C, IF = 900 A Tj = 130 °C Tj = 130 °C Tj = 130 °C, VRD = VRRM per diode per diode 0.
091 1.
6 0.
85 1.
1 15 V V mΩ mA K/W K/W sin.
180 K/W K/W
Conditions
min.
typ.
max.
Unit
Typical Applications*
• Input Bridge Rectifier for AC/DC motor control • Power supply
KD © by SEMIKRON Rev.
26 – 25.
03.
2010 1
SEMiX302KD16s
Fig.
1L: Power dissipation per thyristor/diode vs.
on-state current
Fig.
1R: Power dissipation per thyristor/diode vs.
ambient temperature
Fig.
3L: Power dissipation of two modules vs.
direct current
Fig.
3R: Power dissipation of two modules vs.
case temperature
2
Rev.
26 – 25.
03.
2010
© by SEMIKRON
SEMiX302KD16s
Fig.
4L: Power dissipation of three modules vs.
direct current
Fig.
4R: Power dissipation of three modules vs.
case temperature
Fig.
6: Transient thermal impedance vs.
time
Fig.
7: On-state characteristics
Fig.
8: Surge overload current vs.
time
© by SEMIKRON
Rev.
26 – 25.
03.
2010
3
SEMiX302KD16s
spring configuration
SEMiX 2s
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics.
Components have to be tested for the respective application.
Adjustments may be necessary.
The use of SEMIKRON p...
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