SILICON POWER MOS FET
Description
SILICON POWER MOS FET
NE5531079A
7.
5 V OPERATION SILICON RF POWER LDMOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5531079A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.
5 V radio systems.
Die are manufactured using our NEWMOS-M1 technology and housed in a surface mount package.
This device can deliver 40.
0 dBm output power with 68% power added efficiency at 460 MHz with 7.
5 V supply voltage.
FEATURES
• High output power • High linear gain • Surface mount package • Single supply : Pout = 40.
0 dBm TYP.
(VDS = 7.
5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm) : GL = 20.
5 dB TYP.
(VDS = 7.
5 V, IDset = 200 mA, f = 460 MHz, Pin = 10 dBm) : 5.
7 5.
7 1.
1 mm MAX.
: VDS = 7.
5 V MAX.
• High power added efficiency : add = 68% TYP.
(VDS = 7.
5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)
APPLICATIONS
• 460 MHz band radio systems • 900 MHz band radio systems
ORDERING INFORMATION
Part Number NE5531079A Order Number NE5531079A-A Package 79A (Pb-Free) Marking W5 Supplying Form • 12 mm wide embossed taping • Gate pin face the perforation side of the tape NE5531079A-T1 NE5531079A-T1-A • 12 mm wide embossed taping • Gate pin face the perforation side of the tape • Qty 1 kpcs/reel NE5531079A-T1A NE5531079A-T1A-A • 12 mm wide embossed taping • Gate pin face the perforation side of the tape • Qty 5 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE5531079A-A
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No.
PU10752EJ01V0DS (1st edition) Date Published April 2009 NS
NE5531079A
ABSOLUTE MAXIMUM RATINGS (T A = +25C)
Operation in excess of any one of these parameters may result in permanent damage.
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current (Pulse Test) Total Power Dissipation Channel Temperature Storage Tempe...
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