N-Channel MOSFET
Description
SST4443
Elektronische Bauelemente -2.
3A , -30V , RDS(ON) 120 mΩ P-Channel Enhancement Mode MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SST4443 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial applications.
SOT-26
D
FEATURES
Simple Drive Requirement Smaller Outline Package Surface mount package
E
REF.
H A
C
B
J K G
Millimeter Min.
Max.
0.
37 REF.
0.
30 0.
55 0.
12 REF.
0.
10
L
Millimeter Min.
Max.
2.
70 3.
10 2.
60 3.
00 1.
20 REF.
1.
40 1.
80 0.
95 REF.
0.
60 REF.
REF.
G H J K L
F
MARKING
4443
Date Code
A B C D E F
TOP VIEW
PACKAGE INFORMATION
Package SOT-26 MPQ 3K Leader Size 7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg
1 3
Symbol
VDS VGS TA=25° C TA=70° C IDM TA=25° C PD ID
Ratings
-30 ±20 -2.
3
Unit
V V A
-1.
8 -10 1.
14 0.
01 -55~150 A W W/° C ° C
Thermal Resistance Rating
Maximum Junction to Ambient
3
RθJA
110
° C/W
http://www.
SeCoSGmbH.
com/
Any changes of specification will not be informed individually.
23-Oct-2013 Rev.
A
Page 1 of 4
SST4443
Elektronische Bauelemente -2.
3A , -30V , RDS(ON) 120 mΩ P-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Current Drain-Source Leakage Current
Symbol
Min.
Typ.
Max.
Unit
V V nA µA
Teat Conditions
VGS=0, ID= -250uA VDS=VGS, ID= -250uA VGS=±20V VDS= -30V, VGS=0 VDS= -24V, VGS=0
Static
BVDSS VGS(th) IGSS IDSS -30 -1 Drain-Source On-Resistance Forward Transconductance
2
4
-2.
5
±100
-1 -25 120 170 -
RDS(ON) gfs
-
mΩ S
VGS= -10V, ID= -2A VGS= -4.
5V, ID= -1A VDS...
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