POWER MOSFET
Description
MFIRF7N60 MCIRF7N60
POWER MOSFET
ID = 7.
0A VDS = 600V RDS(on)MAX = 1.
2Ω
Description/ Features The MCIRF7N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.
The new energy efficient design also offers a drainto-source diode with a fast recovery time.
Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection.
150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant
●
Major Ratings and Characteristics Characteristics ID IDM VDS VGS TJ T storage Values 7.
0 28.
0 600 ±30 150 -55 ~150 Units A A V V
℃ ℃
Case Styles
1、 GATE 2、 DRAIN 3、 SOURCE
1、 GATE 2、 DRAIN 3、 SOURCE
Ordering Information Part Number MCIRF7N60 MFIRF7N60 Package TO-220 TO-220F Packaging Tube Tube
1 of 7
MFIRF7N60 MCIRF7N60
Absolute Maximum Rating (Ta = 25℃)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed Total Dissipation Junction Temperature Storage Temperature Single Pulse Avalanche Energy Symbol VDS VGS IDM TO-220 PD TO-220F TJ Tstg.
EAS 150 -55~150 TO-220 420 mj 45 ℃ ℃ Value 600 ±30 28 125 W Unit V V A
TO-220F
420
Electrical Characteristics(Tamb=25℃)
Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source Leakage Current Drain-Source Diode Forward Voltage Forward Trans conductance Gate-Body Leakage Current(Vds=0V) Static Drain-Source On Resistance Thermal Resistance Junction-Case Symbol BVDSS VGS(TH) IDSS VSD Gfs IGSS RDS(ON) RthJ-C Test Condition VGS=0V,ID=250uA VGS=VDS,ID=250uA VDS=600V, VGS=0V VGS=0V,IS=7A VDS=10V, ID=3.
5A VGS=±30V VGS=10V,ID=3.
5A TO-220 MIN.
600 2 3 MAX.
4 1 1.
4 ±100 1.
2 2.
0 Unit V V uA V S nA Ω ℃/W
TO-220F Dynamic Characteristics(Tamb=25℃)
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol CISS COSS CRSS VDS=25V,VGS=0V, F=1.
0MHz Test Condition MIN.
-
-
2.
78
TYP.
1000 110 12.
6
MAX.
-
Unit pF pF pF
2 of 7
Rev.
1.
0
MFIRF7...
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