EB SERIES TRANSISTORS
Description
SY semiconductors
Shenzhen SY Semiconductors Co.
£¬ LTD.
EB SERIES TRANSISTORS EB13009D ¡ñ FEATURES£º ¢Ù HIGH VOLTAGE CAPABILITY ¢Ú HIGH SPEED SWITCHING ¢Û WIDE SOA
¡ñ APPLICATION£º ¢Ù FLUORESCENT LAMP ¢Ú ELECTRON I C BALLAST
¡ñ Absolute Maximum Ratings (Tc=25¡æ )
PARAMETER Collector– Base Voltage Collector– Emitter Voltage Emitter – Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PC Tj Tstg VALUE 700 400 9 12 100 150 -65-150 UNI T V V V A W ¡æ ¡æ
TO - 220
NPN
¡ñElectronic Characteristics (Tc=25¡æ )
CHARACTERISTICS Collector– Base Cutoff Current Collector– Emitter Cutoff Current Collector– Emitter Voltage Emitter – Base Voltage Collector– Emitter Saturation V oltage Base– Emitter Saturation Voltage DC Current Gain Storage Time Falling Time Diode Forward Voltage SYMBOL ICBO ICEO VCEO VEBO Vcesat Vbesat HFE Ts Tf Vf TEST CONDITION VCB=700v VCE =400v IC=10mA IB=0 IE =1mA IC=0 IC=8.
0A IB=1.
6A IC=12A IB=3A IC=8.
0A IB=1.
6A VCE =5v IC=10mA VCE =5v IC=3.
0A VCE =5v IC=12.
0A VCC=5V IC=0.
5A IF=3.
0A 7 10 5 4.
0 50 10.
0 1.
0 2 ¦ Ì S ¦ Ì S V 400 9 0.
8 2.
0 1.
5 MIN MAX 100 250 UNI T ¦ Ì A ¦ Ì A V V V V V
¡ñ CLASSIFICATION OF HFE AND TS
HFE TS 15-20 4.
0-5.
0 20-25 5.
0-6.
0 25-30 6.
0-7.
0 30-35 7.
0-8.
0 35-40 8.
0-9.
0 40-45 9.
0-10.
0
SY semiconductors
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SY semiconductors
Shenzhen SY Semiconductors Co.
£¬ LTD.
EB SERIES TRANSISTORS
EB13009D
SY semiconductors
2/3
SY semiconductors
Shenzhen SY Semiconductors Co.
£¬ LTD.
EB SERIES TRANSISTORS
EB13009D
SYMBOL
A B B1 b c D E e
Min
3.
5 1.
25 0.
75 0.
6 0.
35 14.
0 9.
0
Nom
4.
5 1.
35 0.
85 0.
43 15.
5 10.
0 2.
54
Max
5.
0 1.
5 0.
955 0.
55 16.
5 11.
0
SYMBOL
L L1 D1 §æ b Q Q1 Z
Min
12.
5 2.
5 5.
9 1.
5 2.
0 3.
0
Nom
13.
5 3.
37 6.
5 2.
5 2.
6 3.
8
Max
14.
5 4.
5 7.
1 1.
2 3.
5 3.
5 4.
5
SY semiconductors
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