Dual P-Channel MOSFET
Description
SPP6309
Dual P-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP6309 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.
APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter
FEATURES P-Channel
-20V/0.
45A,RDS(ON)=520mΩ@VGS=-4.
5V -20V/0.
35A,RDS(ON)=700mΩ@VGS=-2.
5V -20V/0.
25A,RDS(ON)=1500mΩ@VGS=-1.
8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD protected SOT-363 (SC-70-6L) package design
PIN CONFIGURATION (SOT-363/SC-70-6L)
PART MARKING
2020/04/14 Ver.
4
Page 1
SPP6309
Dual P-Channel Enhancement Mode MOSFET
PIN DESCRIPTION Pin 1 2 3 4 5 6
Symbol S1 G1 D2 S2 G2 D1
Description Source 1 Gate 1 Drain 2
Source 2 Gate 2 Drain1
ORDERING INFORMATION
Part Number
Package
SPP6309S36RGB
SOT-363
※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPP6309S36RGB : Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150℃)
TA=25℃ TA=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25℃ TA=70℃
Operating Junction Temperature
Storage Temperature Range T ≤ 10sec
Thermal Resistance-Junction to Ambient Steady State
VDSS VGSS
ID
IDM IS PD TJ TSTG RθJA
2020/04/14 Ver.
4
Part Marking 09
Typical
-20 ±12 -1.
0 -0.
7 -3 -0.
6 0.
35 0.
19 -55/150 -55/150 360 400
Unit V V A A A W ℃ ℃
℃...
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