Silicon N-Channel MOS
Description
Power F-MOS FETs
2SK2276
2SK2276
Silicon N-Channel MOS
For switching
6.
5±0.
1
1.
8±0.
1 2.
5±0.
1
Unit : mm
s Features
q Low
5.
3±0.
1 4.
35±0.
1 3.
0±0.
1
ON-resistance RDS(on) switching
q High-speed
0.
2max.
5.
5±0.
1
7.
3±0.
1
0.
8max.
9.
8±0.
1 1.
0±0.
2
1.
0±0.
1
0.
85±0.
1
0.
75±0.
1
0.
5±0.
1 0.
05 to 0.
15
s Absolute Maximum Ratings (Tc = 25˚C)
Parameter Drain-Source breakdown voltage Gate-Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP Tch Tstg
*1
4.
6±0.
1
Rating 60 ±20 ±3 ±5 10 150 –55 to +150
Unit V V A A W ˚C ˚C
G
1 2 3 Marking
2.
3±0.
1
1 : Gate 2 : Drain 3 : Source EIAJ : SC-63 U Type Package
PD *2
s Internal Connection
D
* 1 t ≤ 300µs , Duty Cycle < 10% * 2 TC= 25˚C
S
s Electrical Characteristics (Tc = 25˚C)
Parameter Drain-Source cut-off current Gate-Source leakage current Drain-Source breakdown voltage Gate threshold voltage Drain-Source ON-resistance Forward transadmittance Input capacitance Output capacitance Feedback capacitance Turn-on time Fall time Turn-off time (delay time) Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | Ciss Coss Crss ton tf td(off) VGS=10V, ID= 3A, RL=10 Ω VDS=10V, VGS= 0, f=1MHz Condition VDS= 40V, VGS = 0 VGS=±20V, VDS= 0 ID=1mA, VGS = 0 VDS=10V, ID=1mA VGS=10V, I D= 3A VDS=10V, ID= 3A 2.
4 60 1 0.
135 4 400 210 80 29 53 97 2.
5 0.
2 Min Typ Max 10 ±1 Unit µA µA V V Ω S pF pF pF ns ns ns
Power F-MOS FETs
2SK2276
ID – VDS
8 TC=25˚C 7 6 7
(S)
| Yfs | – ID
8 VDS=10V TC=25˚C 0.
8 0.
7 0.
6 0.
5 0.
4 0.
3 0.
2 0.
1 0 0 2 4 6 8 10 12 0 2
RDS(on) – ID
(1)VGS=10V (2)VGS=4V TC=25˚C
ID (A)
5 4 3 2 1 0
| Yfs |
6 5
Forward transadmittance
4V 3.
5V 3V PD=30W 2.
5V 2V 20 (V)
4 3 2 1 0
Drain-Source ON-resistance RDS(on) (Ω)
Drain current
VGS=10V
(2) (1)
0
4
8
12
16 VDS
24
4
6
8
10
12
Drain-Source voltage
Drain current ID (A)
Drain current ID (A)
ID – VGS
14 12
Drain current ID (A)
Ciss, Coss, Crss – VDS
VDS=10V TC=25˚C
Input capacitance, Outpu...
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