HGTG20N100D2
Description
HGTG20N100D2
May 1995
20A, 1000V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE
Features
• 34A, 1000V • Latch Free Operation • Typical Fall Time 520ns • High Input Impedance • Low Conduction Loss
Description
The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.
The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower on-state voltage drop varies only moderately between +25oC and +150oC.
IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY PART NUMBER HGTG20N100D2 PACKAGE TO-247 BRAND G20N100D2
COLLECTOR (BOTTOM SIDE METAL)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified HGTG20N100D2 1000 1000 34 20 100 ±20 ±30 100A at 0.
8 BVCES 150 1.
20 -55 to +150 260 3 15 UNITS V V A A A V V W W/oC oC oC µs µs
Collector-Emitter Voltage .
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BVCES Collector-Gate Voltage RGE = 1MΩ .
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BVCGR Collector Current Continuous at TC = +25oC .
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IC25 at TC = +90oC .
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IC90 Collector Current Pulsed (Note 1) .
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ICM Gate-Emitter Voltage Continuous.
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VGES Gate-Emitter Voltage Pulsed .
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VGEM Switching Safe Operating Area at TJ = +150oC .
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