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C5355

Part Number	C5355
Manufacturer	Toshiba Semiconductor
Description	2SC5355
Published	Jul 9, 2014
Detailed Description	2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching ...
Datasheet	C5355 PDF File

Overview

2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • • • Excellent switching times: tr = 0.
5 µs (max), tf = 0.
3 µs (max) High collector breakdown voltage: VCEO = 400 V High DC current gain: hFE = 20 (min) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 400 7 5 7 1 1.
5 25 150 −55~150 Unit V V V A A JEDEC W °C °C ...

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