600V N-CHANNEL MOSFET
Description
SVF2N60M/F/T/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cell
TM
structure DMOS technology.
The improved
planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
∗ ∗ ∗ ∗ ∗ 2A,600V,RDS(on)(typ.
)=3.
7Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
NOMENCLATURE
ORDERING SPECIFICATIONS
Part No.
SVF2N60M SVF2N60F SVF2N60T SVF2N60D SVF2N60DTR Package Type TO-251-3L TO-220F-3L TO-220-3L TO-252-2L TO-252-2L Marking SVF2N60M SVF2N60F SVF2N60T SVF2N60D SVF2N60D Material Pb free Pb free Pb free Pb free Pb free Packing Tube Tube Tube Tube Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.
,LTD
Http://www.
silan.
com.
cn
REV:1.
1
2010.
10.
21 Page 1 of 10
SVF2N60M/F/T/D_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Storage Temperature Symbol VDS VGS ID IDM PD EAS TJ Tstg 34 0.
27 Rating SVF2N60M/D SVF2N60T 600 ±30 2.
0 8 44 0.
35 115 -55～+150 -55～+150 23 0.
18 SVF2N60F Unit V V A A W W/°C mJ °C °C
THERMAL CHARACTERISTICS
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating SVF2N60M/D 3.
7 110 SVF2N60T 2.
86 62.
5 SVF2N60F 5.
56 120 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Parameter Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistan...
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