600V N-CHANNEL MOSFET
Description
SVF2N60M/MJ/NF/F/D_Datasheet
2A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N60M(MJ)(NF)(F)(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.
The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.
FEATURES
2A,600V,RDS(on)(typ.
)=3.
7@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
ORDERING INFORMATION
Part No.
SVF2N60M SVF2N60MJ SVF2N60NF SVF2N60F SVF2N60DTR
Package Type
TO-251D-3L TO-251J-3L TO-126F-3L TO-220F-3L TO-252-2L
Marking
SVF2N60M SVF2N60MJ SVF2N60NF SVF2N60F SVF2N60D
Hazardous substance control
Halogen free Halogen free
Pb free Pb free Halogen free
Packing
Tube Tube Tube Tube Tape&Reel
HANGZHOU SILAN MICROELECTRONICS CO.
,LTD
http: //www.
silan.
com.
cn
Rev.
:3.
5 Page 1 of 12
SVF2N60M/MJ/NF/F/D_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25C TC=100C
Drain Current Pulsed
Power Dissipation(TC=25C) -Derate above 25C
Single Pulsed Avalanche Energy(Note1)
Operation Junction Temperature Range
Storage Temperature Range
VDS VGS
ID
IDM
PD
EAS TJ Tstg
SVF2N 60NF
16 0.
13
Ratings
SVF2N
SVF2N
60M/D
60MJ
600
±30
2.
0
1.
3
8.
0
34 35
0.
27 0.
28
115
-55～+150
-55～+150
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
RθJC RθJA
SVF2N 60NF 7.
81 120
Ratings
SVF2N 60M/D
SVF2N 60MJ
3.
7 3.
57
62.
0 62.
0
SVF2N 60F
23 0.
18
Unit
V V
A
A W W/C mJ C C
SVF2N 60F 5.
56 62.
5
Unit
C/W C/W
HANGZHOU SILAN MICROELECTRONICS CO.
,LTD
http: //www.
silan.
com.
cn
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