Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Base Breakdown Voltage-
: VCBO= 1300V (Min.
) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector- Base Voltage
1300
V
VCES
Collector-Emitter Voltage
1300
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
15
A
IB
Base Current- Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
2
A
3 W
100
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2SD1847
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 200mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
hFE-1
DC Current Gain
IC= 4A; IB= 1A
VCB= 750V; IE= 0 VCB= 1300V; IE= 0
IC= 1A; VCE= 5V
hFE-2
DC Current Gain
IC= 4A; VCE= 10V
fT
Current-Gain—Bandwidth Product IC= 1A; VCE= 10V
VECF
C-E Diode Forward Voltage
IF= 5A
Switching times, Resistive Load
tstg
Storage Time
tf
Fall Time
IC= 4A; IB1= 1A; IB2= -2A; VCC= 200V
2SD1847
MIN TYP.
MAX UNIT
7
V
8.
0
V
1.
5
V
10 μA 1.
0 mA
5
25
4
2
MHz
2.
3
V
1.
5
μs
0.
2
μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or...
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