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C4688

Toshiba Semiconductor
Part Number C4688
Manufacturer Toshiba Semiconductor
Description 2SC4688
Published Jun 27, 2014
Detailed Description 2SC4688 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4688 Power Amplifier Applications Unit: mm • • Complemen...
Datasheet PDF File C4688 PDF File

C4688
C4688

Overview
2SC4688 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4688 Power Amplifier Applications Unit: mm • • Complementary to 2SA1803 Suitable for use in 40-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 80 80 5 6 12 0.
6 55 150 −55 to 150 Unit V V V A A W JEDEC °C °C ― ― 2-16F1A JEITA TOSHIBA Note: Using continuously under heavy loads (e.
g.
the application of high Weight: 5.
8 g (typ.
) tempe...


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