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2SB1682

Part Number	2SB1682
Manufacturer	Toshiba
Description	Silicon PNP Triple Diffused Type Transistor
Published	Jun 3, 2014
Detailed Description	2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor) 2SB1682 ○ Power Amplifier App...
Datasheet	2SB1682 PDF File

Overview

2SB1682 TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington power transistor) 2SB1682 ○ Power Amplifier Applications ○ High-Power Switching Applications • • High-breakdown voltage: VCEO = −160 V (min) Complementary to 2SD2636 Unit: mm Maximum Ratings (Tc = 25°C) Characteristic Sy Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC I Pulse I mbol VCBO VCEO VEBO C CP Rating −160 −160 −5 −8 −15 −1 100 W 150 −55 to 150 Unit V V V A A 1.
Base 2.
Collector(heatsink) 3.
Emitter IB PC Tj Tstg °C °C JEDEC JEITA TOSHIBA 2 ― ― -16C1A Equivalent Circuit Collect...

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