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TK09H90A

Toshiba
Part Number TK09H90A
Manufacturer Toshiba
Description Field Effect Transistor
Published May 9, 2014
Detailed Description TK09H90A TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type(π-MOS IV) TK09H90A Switching Regulator Applications...
Datasheet PDF File TK09H90A PDF File

TK09H90A
TK09H90A

Overview
TK09H90A TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type(π-MOS IV) TK09H90A Switching Regulator Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 1.
0Ω (typ.
) : |Yfs| = 6S (typ.
) Unit: mm : IDSS = 100 µA (max) (VDS = 720V) : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Sy Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC ( Note 1) mbol VDSS 90 VDGR VGSS ID IDP 27 PD EAS 77 IAR EAR Tch Tstg 150 8 9 15 150 −55~150 ° Rating 0 900 ±30 9 Unit V V V A A W mJ A mJ °C C Pulse (Note 1) Drain power dissipation (Tc = ...


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