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A1020

Part Number	A1020
Manufacturer	Toshiba Semiconductor
Description	2SA1020
Published	Apr 4, 2014
Detailed Description	2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switchin...
Datasheet	A1020 PDF File

Overview

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • • • Low Collector saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −1 A) High-speed switching: tstg = 1.
0 µs (typ.
) Complementary to 2SC2655 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −5 −2 900 150 −55 to 150 Unit V V V A mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Electrical Characteristics (Ta = 25°C) Characteristics Collector...

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