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A1972

Toshiba Semiconductor
Part Number A1972
Manufacturer Toshiba Semiconductor
Description 2SA1972
Published Mar 18, 2014
Detailed Description www.DataSheet.co.kr 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applica...
Datasheet PDF File A1972 PDF File

A1972
A1972

Overview
www.
DataSheet.
co.
kr 2SA1972 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1972 High-Voltage Switching Applications Unit: mm • High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −400 −400 −7 −0.
5 −1 −0.
25 900 150 −55 to 150 Unit V V V A A mW °C °C JEDEC TO-92MOD JEITA ― Note1: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in TOSHIBA...


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