Power MOSFET
Description
NTP6N60, NTB6N60
Preferred Device
Advance Information Power MOSFET 6 Amps, 600 Volts
N–Channel TO–220 and D2PAK
Designed for high voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits.
Features http://onsemi.
com
• • • • • • • • • •
Higher Current Rating Lower RDS(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified Switch Mode Power Supplies PWM Motor Controls Converters Bridge Circuits
6 AMPERES 600 VOLTS RDS(on) = 1200 mΩ
N–Channel D
Typical Applications
G 4 S 1 Unit Vdc Vdc Vdc VGS VGSM ID ID IDM PD TJ, Tstg EAS "20 "40 Adc – Continuous – Continuous @ 100°C – Single Pulse (tpv10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Drain–to–Source Avalanche Energy – Starting TJ = 25°C (VDD = 100 V, VGS = 10 Vdc, IL = 6 A, L = 25 mH, RG = 25 Ω) Thermal Resistance – Junction–to–Case – Junction–to–Ambient – Junction–to–Ambient (Note 1.
) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds 6.
0 4.
8 21 142 1.
14 –55 to 150 450 Watts W/°C °C mJ Drain NTP6N60 LLYWW Gate Source Gate Drain Source 1 2 TO–220AB CASE 221A STYLE 5 3 2 3 D2PAK CASE 418B STYLE 2 4
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Gate–Source Voltage – Continuous – Non–Repetitive (tpv10 ms) Drain Symbol VDSS VDGR Value 600 600
MARKING DIAGRAMS AND PIN ASSIGNMENTS
Drain Drain
NTB6N60 LLYWW
NTx6N60 LL Y WW
= Device Code = Location Code = Year = Work Week
°C/W RθJC RθJA RθJA TL 0.
88 62.
5 50 260 °C
ORDERING INFORMATION
Device NTP6N60 NTB6N60 NTB6N60T4 Package TO–220AB D2PAK D2PAK Shipping 50 Units/Rail 50 Units/Rail 800/Tape & Reel
1.
When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product.
Specifications and information herein are subject to change without notice.
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