Chip Silicon Rectifier
Description
Chip Silicon Rectifier
HFM301 THRU HFM307
Ultra fast recovery type
Formosa MS
SMC
0.
276(7.
0) 0.
260(6.
6) 0.
012(0.
3) Typ.
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.
0.
032(0.
8) Typ.
0.
040(1.
0) Typ.
0.
152(3.
8) 0.
144(3.
6)
0.
189(4.
8) 0.
173(4.
4)
0.
244(6.
2) 0.
228(5.
8)
0.
087(2.
2) 0.
071(1.
8)
Mechanical data
Case : Molded plastic, JEDEC DO-214AB Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by c athode band Mounting P osition : Any Weight : 0.
00585 ounce, 0.
195 gram
0.
040 (1.
0) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current Forward surge current CONDITIONS Ambient temperature = 55 C 8.
3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C
o
Symbol IO IFSM
MIN.
TYP.
MAX.
3.
0 100 10.
0 300
UNIT A A uA uA
o
Reverse current Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TA = 100o C Junction to ambient f=1MHz and applied 4vDC reverse voltage
IR Rq JA CJ TSTG -55 15 70
C / w pF
+150
o
C
SYMBOLS
MARKING CODE H31 H32 H33 H34 H35 H36 H37
V RRM
(V)
*1
V RMS
(V) 35 70 140 210 280 420 560
*2
VR
*3
VF
*4
T RR
*5
Operating temperature ( o C)
(V) 50 100 200 300 400 600 800
(V)
(nS)
HFM301 HFM302 HFM303 HFM304 HFM305 HFM306 HFM307
50 100 200 300 400 600 800
1.
0 50 -55 to +150 1.
3
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage
1.
7
70
*5 Reverse recovery time
RATING AND CHARACTERISTIC CURVES (HFM301 THRU HFM307)
FIG.
1-TYPICAL FORWARD CHARACTERISTICS 10
AVERAGE FORWARD CURRENT,(A)
1~ HF M3 0 3
FIG.
2-TYPICAL FORWARD CURRENT DERATING CURVE
3.
6 3.
0 2.
4 1.
8 1.
2 0.
6 0 0 20 40 60 80 100 120 140 160 180 200
Singl...
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