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TC58NVG6T2FTA00

Part Number	TC58NVG6T2FTA00
Manufacturer	Toshiba
Description	64 GBIT (8G X 8 BIT) CMOS NAND E2PROM
Published	Feb 1, 2014
Detailed Description	TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG6T2FTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64 GBIT (8G...
Datasheet	TC58NVG6T2FTA00 PDF File

Overview

TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG6T2FTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64 GBIT (8G  8 BIT) CMOS NAND E PROM (Triple-Level-Cell) DESCRIPTION The TC58NVG6T2FTA00 is a single 3.
3 V 64 Gbit (79,054,700,544 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (8192  1024) bytes  258 pages 4156 blocks.
The device has four 9216-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 9216-byte increments.
The Erase operation is implemented in a single block unit (2064 Kbytes  258 Kbytes:9216 bytes x 258 pages).
The TC58NVG6T2FTA00 is a serial-type m...

Similar Datasheet

TC58NVG6T2FTA00 64 GBIT (8G X 8 BIT) CMOS NAND E2PROM - Toshiba

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