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2SK3911

Toshiba
Part Number 2SK3911
Manufacturer Toshiba
Description N-Channel MOSFET
Published Jan 27, 2014
Detailed Description 2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI) 2SK3911 Switching Regulator Applica...
Datasheet PDF File 2SK3911 PDF File

2SK3911
2SK3911

Overview
2SK3911 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI) 2SK3911 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 60 nC (typ.
) • Low drain-source ON resistance: RDS (ON) = 0.
22 Ω (typ.
) • High forward transfer admittance: |Yfs| = 11 S (typ.
) • Low leakage current: IDSS = 500 μA (VDS = 600 V) • Enhancement model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Rep...


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