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2SK3878

Toshiba
Part Number 2SK3878
Manufacturer Toshiba
Description N-Channel MOSFET
Published Jan 23, 2014
Detailed Description 2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications ...
Datasheet PDF File 2SK3878 PDF File

2SK3878
2SK3878

Overview
2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.
0 Ω (typ.
) • High forward transfer admittance: ⎪Yfs⎪ = 7.
0 S (typ.
) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Cha...


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