NPN SILICON RF POWER TRANSISTOR
Description
HF100-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF100-12 is Designed for
PACKAGE STYLE .
500 4L FLG
.
112x45° A FULL R Ø.
125 NOM.
L
FEATURES:
• PG = 12 dB min.
at 100 W/30 MHz • IMD3 = -30 dBc max.
at 100 W (PEP) • Omnigold™ Metalization System
C B
E H
D G
F K
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ T STG θ JC
O O
I J
20 A 36 V 18 V 4.
0 V 290 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 0.
6 OC/W
O O
DIM A B C D E F G H I J K L
MINIMUM
inches / mm
MAXIMUM
inches / mm
.
220 / 5.
59 .
125 / 3.
18 .
245 / 6.
22 .
720 / 18.
28 .
125 / 3.
18 .
970 / 24.
64 .
495 / 12.
57 .
003 / 0.
08 .
090 / 2.
29 .
150 / 3.
81 .
980 / 24.
89
.
230 / 5.
84 .
255 / 6.
48 .
7.
30 / 18.
54 .
980 / 24.
89 .
505 / 12.
83 .
007 / 0.
18 .
110 / 2.
79 .
175 / 4.
45 .
280 / 7.
11 1.
050 / 26.
67
ORDER CODE: ASI10599
CHARACTERISTICS
SYMBOL
BV CBO BV CES BV CEO BV EBO ICES hFE COB GP IMD3 IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 15 V VCE = 5.
0 V
TC = 25 OC
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36 36 18 4.
0 20
UNITS
V V V V mA --pF dB dBc
IC = 5.
0 A f = 1.
0 MHz ICQ = 150 mA ICQ = 150 mA f = 30 MHz POUT = 100 W
10 400 11 13
200
VCB = 12.
5 V VCE = 12.
5 V VCE = 12.
5 V
-30
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV.
A
1/1
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