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TC58NVG2D4BFT00

Part Number	TC58NVG2D4BFT00
Manufacturer	Toshiba
Description	4 GBIT (512M X 8 BIT) CMOS NAND E2PROM
Published	Nov 18, 2013
Detailed Description	TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG2D4BFT00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT (512...
Datasheet	TC58NVG2D4BFT00 PDF File

Overview

TOSHIBA CONFIDENTIAL TENTATIVE TC58NVG2D4BFT00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT (512M × 8 BIT) CMOS NAND E PROM (Multi Level Cell) DESCRIPTION The TC58NVG2D4B is a single 3.
3 V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 128 pages × 2048 blocks.
The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.
The Erase operation is implemented in a single block unit (256 Kbytes + 8 Kbytes: 2112 bytes × 128 pages).
The TC58NVG2D4B is a serial-type memory device wh...

Similar Datasheet

TC58NVG2D4BFT00 4 GBIT (512M X 8 BIT) CMOS NAND E2PROM - Toshiba

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