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TC58NVG2S3ETA00

Part Number	TC58NVG2S3ETA00
Manufacturer	Toshiba
Description	4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
Published	Nov 18, 2013
Detailed Description	TC58NVG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIP...
Datasheet	TC58NVG2S3ETA00 PDF File

Overview

TC58NVG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG2S3E is a single 3.
3V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.
The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58NVG2S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/...

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TC58NVG2S3ETA00 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM - Toshiba
TC58NVG2S3ETAI0 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM - Toshiba

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