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TC58NVG0S3ETA00

Part Number	TC58NVG0S3ETA00
Manufacturer	Toshiba
Description	1 GBIT (128M X 8 BIT) CMOS NAND E2PROM
Published	Nov 18, 2013
Detailed Description	TC58NVG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E PROM DESCRIP...
Datasheet	TC58NVG0S3ETA00 PDF File

Overview

TC58NVG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 GBIT (128M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.
3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.
The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments.
The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).
The TC58NVG0S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/...

Similar Datasheet

TC58NVG0S3ETA00 1 GBIT (128M X 8 BIT) CMOS NAND E2PROM - Toshiba

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