N-Channel MOSFET
Description
UD6016
N-Ch 60V Fast Switching MOSFETs
General Description The UD6016 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The UD6016 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS 60V
Applications
RDS(ON) 12mΩ
ID 47A
z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch
TO252 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Avalanche Current Total Power Dissipation Total Power Dissipation
4 4 2 3 1 1 1 1
Rating 60 ±20 47 30 9.
2 7.
5 100 123 38 52 2 -55 to 150 -55 to 150
Units V V A A A A A mJ A W W ℃ ℃
Single Pulse Avalanche Energy
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC Parameter Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case
1 1
Typ.
-----
Max.
62 2.
4
Unit ℃/W ℃/W
1
Free Datasheet http://www.
datasheet4u.
com/
UD6016
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Conditions VGS=0V , ID=250uA Reference to 25℃ , ID=1mA VGS=10V , ID=30A VGS=4.
5V , ID=15A VGS=VDS , ID =250uA VDS=48V , VGS=0V , TJ=25℃ VDS=48V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V VDS=5V , ID=30A VDS=0V , VGS=0V , f=1MHz VDS=48V , VGS=4.
5V , ID=15A Min.
60 ------1.
2 -----------------...
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