P-Channel MOSFET
Description
SMG3401
-4.
2A, -30V,RDS(ON) 50m£[ Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.
FET
A suffix of "-C" specifies halogen & lead-free
A
Description
The SMG3401 uses advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness device.
The SMG3401 is universally used for all commercial-industrial applications.
S
2
L
SC-59 Dim Min 2.
70 1.
40 1.
00 0.
35 1.
70 0.
00 0.
10 0.
20 0.
85 2.
40 Max 3.
10 1.
60 1.
30 0.
50 2.
10 0.
10 0.
26 0.
60 1.
15 2.
80
3 Top View
B
1
A B C
D G C J K
Drain
D G H J K L S
Features
* Small Package Outline * Lower Gate Charge * RoHS Compliant
H
Gate Source
D
All Dimension in mm
G
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg
3 3
Symbol
VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C
o o o
Ratings
-30
±12 -4.
2 -3.
5 30 1.
38 0.
01 -55~+150
Unit
V V A A A W
W/ C
o o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Max.
Ratings
90
Unit
o
Rthj-a
C /W
http://www.
SeCoSGmbH.
com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev.
A
Free Datasheet http://www.
datasheet4u.
com/
Page 1 of 4
SMG3401
-4.
2A, -30V,RDS(ON) 50m£[ Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.
FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=55 oC)
o
Symbol
BVDSS VGS(th) IGSS IDSS
Min.
-30
-0.
7
_ _ _ _
Typ.
_ _ _ _ _ _ _ _
Max.
_
Unit
V V nA uA uA
Test Condition
VGS=0V, ID=-250uA VDS=VGS, ID=-250uA VGS=± 12V VDS=-24V,VGS=0 VDS=-24V,VGS=0 VGS=-10V, ID=- 4.
2A
-1.
3
±100
-1 -5 50 65 120
_ _ _
Static Drain-Source On-Resistance
2
RDS(ON)
_ _
m£[
VGS=-...
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