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2SA1298

Part Number	2SA1298
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1298 Low Frequency Power Amplifier Application Power Swit...
Datasheet	2SA1298 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1298 Low Frequency Power Amplifier Application Power Switching Applications 2SA1298 Unit: mm ⚫ High DC current gain: hFE = 100 to 320 ⚫ Low saturation voltage: VCE (sat) = −0.
4 V (max) (IC = −500 mA, IB = −20 mA) ⚫ Suitable for driver stage of small motor ⚫ Complementary to 2SC3265 ⚫ Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −30 V −25 V −5 V −800 mA −160 mA 200 ...

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