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2SA1162

Toshiba Semiconductor
Part Number 2SA1162
Manufacturer Toshiba Semiconductor
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description Bipolar Transistors Silicon PNP Epitaxial Type 2SA1162 1. Applications • Low-Frequency Amplifiers • Audio Frequency Gene...
Datasheet PDF File 2SA1162 PDF File

2SA1162
2SA1162

Overview
Bipolar Transistors Silicon PNP Epitaxial Type 2SA1162 1.
Applications • Low-Frequency Amplifiers • Audio Frequency General Purpose Amplifier Applications 2.
Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = -50 V (3) High collector current: IC = -150 mA (max) (4) High hFE: hFE = 70 to 400 (5) Excellent hFE linearity: hFE (IC = -0.
1 mA)/hFE (IC = -2 mA) = 0.
95 (typ.
) (6) Low noise: NF = 1 dB (typ.
), 10 dB (max) (7) Complementary to 2SC2712 3.
Packaging 2SA1162 S-Mini 1: Base 2: Emitter 3: Collector ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-12 2021-10-06 Rev.
3.
0 4.
Orderable part numb...


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