HEXFET Power MOSFET
Description
AUTOMOTIVE GRADE
PD - 96322
HEXFET® Power MOSFET
Features
l l l l l l l
AUIRFB3207
75V 3.
6mΩ 4.
5mΩ 170A 75A
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
D
V(BR)DSS RDS(on) typ.
max.
ID (Silicon Limited) ID (Package Limited)
G S
c
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
G
S D G
TO-220AB AUIRFB3207
D S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
http://www.
DataSheet4U.
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Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS IAR EAR dV/dt TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally limited) Avalanche Current
Max.
d
Ãd
e
170 120 75 720 300 2.
0 ± 20 910 See...
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