Silicon Darlington Power Transistor
Description
SEMICONDUCTORS
BDT64-A-B-C SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe.
They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.
PNP complements are BDT65-A-B-C Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C BDT65 BDT65A BDT65B BDT65C
Value
-60 -80 -100 -120 -60 -80 -100 -120
Unit
VCBO
Collector-Base Voltage
www.
DataSheet.
net/
V
VCEO
Collector-Emitter Voltage
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current
-12
A
ICM
Collector Peak Current
-20
A
26/09/2012
COMSET SEMICONDUCTORS
1|5
Datasheet pdf - http://www.
DataSheet4U.
co.
kr/
SEMICONDUCTORS
BDT64-A-B-C
ABSOLUTE MAXIMUM RATINGS Symbol Ratings
BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C BDT64 BDT64A BDT64B BDT64C
Value
Unit
IB
Base Current
-500
mA
PT
Power Dissipation
@ Tmb < 25°
125
Watts
TJ
Junction Temperature
150 °C -65 to +150
Ts
Storage Temperature range
www.
DataSheet.
net/
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS Symbol
Rthj-c
Ratings
Thermal Resistance, Junction to Case
Value
1
Unit
°C/W
26/09/2012
COMSET SEMICONDUCTORS
2|5
Datasheet pdf - http://www.
DataSheet4U.
co.
kr/
SEMICONDUCTORS
BDT64-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
IE= 0,VCB = -VCBOmax ICBO Collector Cutoff Current
IE= 0,VCB= -1/2 VCBOmax TJ= 150 °C IE= 0, VCE= -1/2 VCEOmax
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VEB= -5 V, IC= 0
www.
DataSheet.
net/
VCEO
Collector-Emitter I = -30 mA, IB= 0 Breakdown Voltage C
IC= -5 A, IB= -20 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC= -10 A, IB= -100 mA
BDT64 BDT64A BDT64B B...
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