6A N-channel Power MOSFET
Description
STRH8N10
Datasheet
Rad-Hard 100 V, 6 A, N-channel Power MOSFET
2 1
3
SMD.
5
D(3)
G(1)
S(2)
SC3015C
Product status link STRH8N10
Features
VDS 100 V
ID
RDS(on) typ.
Qgtyp.
6A
0.
27 Ω
18.
5 nC
• Fast switching • 100 % avalanche tested • Hermetic package • 50 krad TID • SEE radiation hardened
Description
The STRH8N10 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure.
It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE).
Qualified as per ESCC detail specification No.
5205/023 and available in SMD.
5 hermetic package it is specifically recommended for space and harsh environment applications and suitable for in-Satellite power conversion, motor control and power switch circuits.
In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Device summary
Product summary
Part numbers
STRH8N10S1 STRH8N10SG STRH8N10ST
Quality level
Engineering model ESCC flight
ESCC Part number
5205/023
Package SMD.
5
Note:
See Table 8 for ordering information.
Lead finish
Gold Solder-dip
Radiation level
-
50 krad
DS7120 - Rev 11 - January 2024 For further information contact your local STMicroelectronics sales office.
www.
st.
com
STRH8N10
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
VDS(1)
Drain-source voltage (VGS = 0)
VGS(2)
Gate-source voltage
ID(3)
Drain current (continuous)
ID
Drain current (continuous) at Tamb = 100 °C
IDM(4)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
PTOT
Total dissipation at Ta = 25 °C
dv/dt(5)
Peak diode recovery voltage slope
Top
Operating temperature range
Tj
Max.
operating junction temperature range
1.
This rating is guaranteed at TJ ≥ 25 °C (see Figure 9.
Normalized V(BR)DSS vs temperature ).
2.
This value is guaranteed over the full range of temperature.
3.
Rated according to the ...
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