NPN SILICON POWER TRANSISTOR
Description
2N5190 2N5190R 2N5191 2N5191R 2N5192 2N5192R NPN SILICON POWER TRANSISTOR
TO-126 CASE
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5190 series, 2N5190R series types are silicon NPN epitaxial base power transistors designed for medium power amplifier and switching applications.
Part numbers with the suffix “R” have the base and emitter leads reversed from the standard lead configuration.
All other specifications are identical to the standard part numbers.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg ΘJC
2N5190 2N5191 2N5192 40 60 80 40 60 80 5.
0 4.
0 7.
0 1.
0 40 -65 to +150 3.
12
ELECTRICAL CHARACTERISTICS: (TC=25°C) SYMBOL TEST CONDITIONS
ICBO
VCB=Rated VCBO
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