SINGLE P-CHANNEL JFET
Description
2N5114 SERIES
Linear Integrated Systems
FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5114 LOW ON RESISTANCE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS1 @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature Junction Operating Temperature Maximum Power Dissipation Continuous Power Dissipation Maximum Currents Gate Current Maximum Voltages Gate to Drain Gate to Source 30V 30V -50mA 500mW -55 to 200°C -55 to 200°C 75Ω 6pF
SINGLE P-CHANNEL JFET
TO-18 BOTTOM VIEW G
2 3
D
S
1
STATIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM.
BVGSS VGS(off) VGS(F) VDS(on) CHARACTERISTIC Gate to Source Breakdown Voltage Gate to Source Cutoff Voltage Gate to Source Forward Voltage Drain to Source On Voltage -0.
7 -1.
0 -0.
7 -0.
5 IDSS IGSS IG ID(off) rDS(on) Drain to Source Saturation Current2 Gate Leakage Current Gate Operating Current Drain Cutoff Current Drain to Source On Resistance 5 -5 -10 -10 -10 75 100 -500 -500 -500 150 Ω pA -30 -90 -15 500 -60 500 -5 -25 500 TYP 2N5114 MIN 30 5 10 -1 -1.
3 -0.
8 -0.
6 mA MAX 2N5115 MIN 30 3 6 -1 MAX 2N5116 MIN 30 1 4 -1 V MAX UNIT CONDITIONS IG = 1µA, VDS = 0V VDS = -15V, ID = -1nA IG = -1mA, VDS = 0V VGS = 0V, ID = -15mA VGS = 0V, ID = -7mA VGS = 0V, ID = -3mA VDS = -18V, VGS = 0V VDS = -15V, VGS = 0V VGS = 20V, VDS = 0V VDG = -15V, ID = -1mA VDS = -15V, VGS = 12V VDS = -15V, VGS = 7V VDS = -15V, VGS = 5V VGS = 0V, ID = -1mA
Linear Integrated Systems
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DYNAMIC ELECTRICAL CHARACTERISTICS @25 °C (unless otherwise stated) SYM.
gfs gos rds(on) Ciss CHARACTERISTIC Forward Transconductance Output Conductance Drain to Source On Resistance Input Capacitance 20 5 Crss Reverse Transfer Capacitance 6 6 en Equivalent Noise Voltage 20 TYP 4.
5 20 75 25 7 pF 7 7
nV/√Hz
2N5114 MIN MAX
2N5115 MIN MAX
2N5116 MIN MAX
UNIT mS µS
CONDITIONS VDS = -15V, ID = -1mA f = 1kHz VGS = 0V, ID = 0mA f = 1kHz VDS = -15V, VGS = 0V f = 1MHz VDS = 0V, VGS = ...
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