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2SC4409

Part Number	2SC4409
Manufacturer	Toshiba Semiconductor
Description	Silicon NPN Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Power switching applica...
Datasheet	2SC4409 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Power switching applications 2SC4409 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.
5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.
) • Small flat package • PC = 1~2 W (Mounted on a ceramic substrate) • Complementary to 2SA1681 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Base current IB 0.
2 A Collector power dissipation PC 500 mW Collector power dissipation PC (Note 1) 1000 mW Junction tempe...

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