MOSFET
Description
Analog Power
AM7200N
N-Channel 200-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY rDS(on) (mΩ) 400 @ VGS = 10V 450 @ VGS = 4.
5V
VDS (V) 200
ID(A) 3 2.
8
DFN5x6-8L
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 TA=25°C 3 ID Continuous Drain Current a TA=70°C 2.
4 IDM Pulsed Drain Current b 20 a I 6.
2 Continuous Source Current (Diode Conduction) S T =25°C 5 A PD Power Dissipation a TA=70°C 3.
2 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range
www.
DataSheet.
co.
kr
Units V
A A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State
Symbol Maximum 25 RθJA 65
Units °C/W
Notes a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
© Preliminary
1
Publication Order Number: DS-AM7200N-1A
Datasheet pdf - http://www.
DataSheet4U.
net/
Analog Power Electrical Characteristics
Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Test Conditions Static VDS = VGS, ID = 250 uA VDS = 0 V, VGS = ±20 V VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55°C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 3.
0 A VGS = 4.
5 V, ID = 2.
8 A VDS = 15 V, ID = 3.
0 A IS = 3.
1 A, VGS = 0 V Dynamic VDS = 100 V, VGS = 4.
5 V, ID = 2.
0 A Min 1 Typ
AM7200N
Max
Unit V uA uA A
±10 1 10 10 400 450 10 0.
77 7.
9 3.
4 3.
9 3.
7 ...
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