Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Description
New Product
VF20M120C
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vishay.
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Vishay General Semiconductor
Ultra Low VF = 0.
55 V at IF = 5 A
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS ®
ITO-220AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max.
10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition
1 VF20M120C
PIN 1 PIN 3 PIN 2
2
3
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
2 x 10 A 120 V 120 A 0.
64 V 150 °C
MECHANICAL DATA
Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
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DataSheet.
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MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) per device per diode IF(AV) IFSM dV/dt VAC TJ, TSTG SYMBOL VRRM VF20M120C 120 20 A 10 120 10 000 1500 - 40 to + 150 A V/μs V °C UNIT V
Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load Voltage rating of change (rated VR) Isolation voltage from termal to heatsink t = 1 min Operating junction and storage temperature range
Revision: 11-Jan-12
Document Number: 89469 1 For technical questions within your region: DiodesAmericas@vishay.
com, DiodesAsia@vishay.
com, DiodesEurope@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000
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