Trench MOS Barrier Schottky Rectifier Rectifier
Description
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VBT1045CBP
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection
Ultra Low VF = 0.
34 V at IF = 2.
5 A
TMBS ®
TO-263AB
FEATURES
• Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
2
K
• Not recommended for PCB bottom side wave mounting • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
1 VBT1045CBP
PIN 1 PIN 2 K HEATSINK
TYPICAL APPLICATIONS
For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.
0 A TOP max.
2 x 5.
0 A 45 V 100 A 0.
41 V 150 °C
MECHANICAL DATA
Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage per device Maximum average forward rectified current (fig.
1) per diode Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode Operating junction and storage temperature range Junction temperature in DC forward current without reverse bias, t ≤ 1 h Notes (1) With heatsink (2) Meets the requirements of IEC 61215 ed.
2 bypass diode thermal test SYMBOL VRRM IF(AV) (1) IFSM TOP, TSTG TJ (2) VBT1045CBP 45 10 A 5 100 - 40 to + 150 ≤ 200 A °C °C UNIT V
Document Number: 89371 Revision: 27-Oct-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.
com, DiodesAsia@vishay.
com, DiodesEurope@vishay.
com
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